1. product profile 1.1 general description 140 w ldmos power transistor with improved video bandwidth for base station applications at frequencies from 2600 mhz to 2700 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5 mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low thermal resistance providing excellent thermal stability ? decoupling leads to enable improved video bandwidth (100 mhz typical) ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifier for w-cdma base statio ns and multi carrier applications in the 2600 mhz to 2700 mhz frequency range blf8g27ls-140v power ldmos transistor rev. 3 ? 1 may 2015 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2600 to 2700 1300 32 45 17.4 30 ? 32 [1] 2-carrier w-cdma 2600 to 2700 1300 28 35 17.0 29 ? 33 [1]
blf8g27ls-140v all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rig hts reserved. product data sheet rev. 3 ? 1 may 2015 2 of 12 nxp semiconductors blf8g27ls-140v power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect mttf. 5. recommended operating conditions 6. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1drain 2gate 3source [1] 4,5 video decoupling 6n . c . 7n . c . d d d table 3. ordering information type number package name description version blf8g27ls-140v - earless flanged ldmost ceramic package; 6 leads sot1120b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c t case case temperature [1] - 150 ?c table 5. operating conditions symbol parameter conditions min typ max unit t case case temperature ? 40 - +125 ?c table 6. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 55 w 0.27 k/w
blf8g27ls-140v all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rig hts reserved. product data sheet rev. 3 ? 1 may 2015 3 of 12 nxp semiconductors blf8g27ls-140v power ldmos transistor 7. characteristics 8. test information 8.1 ruggedness in class-ab operation the blf8g27ls-140v is capable to withsta nd a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =32v; i dq = 1300 ma; p l = 180 w (cw); f = 2620 mhz. 8.2 impedance information [1] z s and z l defined in figure 1 . table 7. dc characteristics t j = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =2.16ma 65 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 216 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 4.2 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -40-a i gss gate leakage current v gs =11v; v ds =0v - - 420 na g fs forward transconductance v ds =10v; i d = 10.8 a - 16 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =7.56a -0.06- ? table 8. rf characteristics test signal: 2-carrier w-cdma; par 8.4 db at 0.01 % probability on ccdf; 3gpp test model 1; 64 dpch; f 1 = 2627.5 mhz; f 2 = 2687.5 mhz; rf performance at v ds = 32 v; i dq = 1300 ma; t case = 25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 45 w 15.8 17.4 18.7 db rl in input return loss p l(av) = 45 w - ? 18 ? 8db ? d drain efficiency p l(av) = 45 w 27 30 - % acpr 5m adjacent channel power ratio (5 mhz) p l(av) = 45 w - ? 32 ? 29 dbc table 9. typical impedance i dq = 1300 ma; main transistor v ds = 32 v. f z s [1] z l [1] (mhz) (? ) (? ) 2600 2.0 ? j4.8 1.4 ? j3.1 2700 3.5 ? j4.8 1.4 ? j3.1
blf8g27ls-140v all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rig hts reserved. product data sheet rev. 3 ? 1 may 2015 4 of 12 nxp semiconductors blf8g27ls-140v power ldmos transistor 8.3 vbw in class-ab operation the blf8g27ls-140v shows 100 mhz (typical) video bandwidth in class-ab test circuit in 2.6 ghz to 2.7 ghz band at v ds = 32 v and i dq = 1.3 a. 8.4 test circuit fig 1. definition of transistor impedance d d i g u d l q = / = 6 j d w h printed-circuit board (pcb): taconic rf35; ? r = 3.5; thickness = 0.765 mm; thickness copper plating = 35 ? m. see table 10 for a list of components. fig 2. component layout for class-ab production test circuit table 10. list of components for test circuit see figure 2 . component description value remarks c1, c2, c3, c4, c13 multilayer ceramic chip capacitor 10 pf [1] atc100b c14 multilayer ceramic chip capacitor 0.5 pf [1] atc100b c5, c6 multilayer cerami c chip capacitor 1 ? f, 5 0 v [2] murata c7, c8 multilayer cerami c chip capacitor 10 ? f, 50 v [2] murata c9 multilayer ceramic chip capacitor 4.7 ? f, 5 0 v [2] murata d d d p p p p p p & |